Samsung to Produce 128GB DDR4 Modules for Enterprise Servers

November 26, 2015—Electronics giant Samsung announced that it is mass producing the industry’s first “through silicon via” (TSV) double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules, for enterprise servers and data centers.
 
The 128GB TSV DDR4 RDIMM is comprised of a total of 144 DDR4 chips, arranged into 36 4GB DRAM packages, each containing four 20-nanometer (nm)-based 8-gigabit (Gb) chips assembled with cutting-edge TSV packaging technology.
 
In the new TSV packages, the chip dies are ground down to a few dozen micrometers, pierced with hundreds of fine holes and vertically connected by electrodes passing through the holes, allowing for a significant boost in signal transmission. These 128GB TSV DDR4 modules are specially designed so that the master chip of each 4GB package embeds the data buffer function to optimize module performance and power consumption.
 
In the future, the South Korean company is looking into also releasing 20-nanometer 8 GB DRAM chips. It will also offer higher performance modules that scale to 3,200 Mbps and 2,667 Mbps.

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